| PART |
Description |
Maker |
| P6LU-2415EH52 P6LU-0505EH52 P6LU-0512EH52 P6LU-120 |
Input voltage:12V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:12V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
5.2KV ISOLATED 1W UNREGULATED SINGLE OUTPUT SIP7 5.2KV隔震1W的未稳压单输出SIP7
|
PEAK[PEAK electronics GmbH]
|
| P6MU-2415EH52 P6MU-0505EH52 P6MU-0512EH52 P6MU-120 |
Input voltage:5V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:12V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
Input voltage:5V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 15V (67mA), 5.2KV isolated 1W unregulated single output
Input voltage:12V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
5.2 KV ISOLATED 1W UNREGULATED SINGLE OUTPUT DIP14 5.2千伏隔震1W的未稳压单输出DIP14
|
http://
PEAK[PEAK electronics GmbH]
|
| CG3310 ECG3323 ECG3312 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-247VAR
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-247VAR
|
|
| 70U120 |
Diode Switching 1.2KV 250A 2-Pin DO-9
|
New Jersey Semiconductor
|
| DF100R12KF-A FD150R12KF-K |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 100A一（c）|米：HL093HW048
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 150A一（c）|米：HL093HW048
|
Atmel, Corp.
Air Cost Control
|
| CAS300M12BM2 |
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module
|
Cree, Inc
|
| CCS050M12CM2 |
1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module
|
Cree, Inc
|
| IRKU91-12S90 IRKU71-12 IRKU71-12S90 IRKU71-16 IRKU |
THYRISTOR MODULE|SCR|DUAL|CC|1.2KV V(RRM)|90A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.2KV V(RRM)|70A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.6KV V(RRM)|70A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|400V V(RRM)|70A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|70A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.6KV V(RRM)|90A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|90A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|90A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 1.2KV五（无线资源管理）| 90A型我（翻译）
THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|70A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 1.2KV五（无线资源管理）|0A我（翻译
THYRISTOR MODULE|SCR|DUAL|CC|400V V(RRM)|90A I(T) 晶闸管模块|可控硅|双|消委会| 400V五（无线资源管理）| 90A型我（翻译）
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
Dynex Semiconductor, Ltd.
Glenair, Inc.
|
| 7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C)
From old datasheet system
|
Fuji Semiconductors, Inc.
|
| GP400LSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
ITT, Corp.
|
