| PART |
Description |
Maker |
| IDT74FCT652T IDT74FCT646ATP IDT74FCT652ATSO IDT74F |
FAST CMOS OCTAL TRANSCEIVER/ REGISTERS (3-STATE)
FAST CMOS OCTAL TRANSCEIVER/ REGISTERS (3-STATE) FCT SERIES, 8-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, CDIP24
FAST CMOS OCTAL TRANSCEIVER/ REGISTERS (3-STATE) 快速CMOS八端口收发器/寄存器（3态）
CAP 4.7UF 10V 80-20% Y5V SMD-1206 TR-7-PL SN-NIBAR 快速CMOS八端口收发器/寄存器（3态）
CAP 2.2UF 10V 10% X7R SMD-0805 TR-7-PL SNPB-NIBAR 快速CMOS八端口收发器/寄存器（3态）
CAP 2.2UF 25V 20% X7R SMD-1210 TR-7-PL SN-NIBAR 快CMOS八端口收发器/寄存器（3态）
CAP 4.7UF 16V 80-20% Y5V SMD-1210 TR-7-PL SN-NIBAR 快CMOS八端口收发器/寄存器（3态）
CAP 0.1UF 25V 5% X7R SMD-0603 TR-7-PA SNPB-NIBAR 快速CMOS八端口收发器/寄存器（3态）
CAP 0.33UF 25V 80-20% Y5V SMD-1206 TR-7-PL SN-NIBAR
CAP 0.22UF 100V 20% Z5U SMD-1825 TR-7-PL SN-NIBAR
CONNECTOR ACCESSORY
; ESR:26ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Techn...
|
| QM30HA-H |
CAP CER 10000PF 100V X7R 1005 中功率开关使用绝缘型
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M27C4001-35F1TR M27C4001-35F1X M27C4001-35F6TR M27 |
4 MBIT (512KB X8) UV EPROM AND OTP ROM
CAP 1000PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 0.01UF 25V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 0.01UF 25V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1000PF 100V 10% NP0(C0G) SMD-1206 TR-13-PL SN-NIBAR
CAP 1000PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 0.01UF 25V 20% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 12PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 120PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1300PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1000PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 12PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
LED Lamp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM 4兆位× 8紫外12KB的存储器和OTP存储
SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 20FT 4兆位× 8紫外12KB的存储器和OTP存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 12062R125K6B20D |
CAP 1.2UF 10V 10% X7R SMD-1206 T&R-7IN-PA NI-SN CAPACITOR, CERAMIC, MULTILAYER, 10 V, X7R, 1.2 uF, SURFACE MOUNT, 1206
|
Yageo, Corp.
|
| NMC1206Y5V105Z50TRPF NMC0402X5R475M6.3TRPLPF NMC08 |
CAP 1UF 50V 80-20% Y5V SMD-1206 TR-7-PA CAPACITOR, CERAMIC, MULTILAYER, 50 V, Y5V, 1 uF, SURFACE MOUNT, 1206
CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, X5R, 4.7 uF, SURFACE MOUNT, 0402 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, Y5V, 4.7 uF, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, X7R, 4.7 uF, SURFACE MOUNT, 0805 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, X5R, 4.7 uF, SURFACE MOUNT, 0603 CHIP, ROHS COMPLIANT
CAP 10UF 10V 80-20% Y5V SMD-1206 TR-7-PA CAPACITOR, CERAMIC, MULTILAYER, 10 V, Y5V, 10 uF, SURFACE MOUNT, 1206
CAP 3.3UF 16V 10% X5R SMD-1206 TR-7-PL CAPACITOR, CERAMIC, MULTILAYER, 16 V, X5R, 3.3 uF, SURFACE MOUNT, 1206
CAP 4.7UF 16V 10% X7R SMD-1210 TR-7-PL CAPACITOR, CERAMIC, MULTILAYER, 16 V, X7R, 4.7 uF, SURFACE MOUNT, 1210
CAP 10UF 10V 10% X5R SMD-1206 TR-7-PL CAPACITOR, CERAMIC, MULTILAYER, 10 V, X5R, 10 uF, SURFACE MOUNT, 1206
|
NIC Components, Corp.
|
| M27C512-10 M27C512-12F1 M27C512-12F1E M27C512-12F1 |
CAP 620PF 200V 1% NP0(C0G) RAD.20 T&R R-MIL-PRF-20 STANDOFF
1-To-4 Address Register/Driver With 3-State Outputs 80-TSSOP -40 to 85 512千位4K的8）紫外线存储器和OTP存储
SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 50FT 512千位64Kb的x8紫外线存储器和OTP存储
512 Kbit (64K x8) UV EPROM and OTP EPROM 512千位4K的8）紫外线存储器和OTP存储
512 Kbit 64Kb x8 UV EPROM and OTP EPROM 512千位64Kb的x8紫外线存储器和OTP存储
SMM310; Package: HG-MMA-4; Acoustic Sensitivity: -42.0 dBV/Pa; Signal to Noise: 59.0 dB(A); V<sub>DD</sub> (min): 1.5 V; V<sub>DD</sub> (max): 3.3 V; Distortion Treshold: 110.0 dBSPL; 512千位64Kb的x8紫外线存储器和OTP存储
CAP 39PF 200V 5% NP0(C0G) AXIAL T&R R-MIL-PRF-20
CAP 33PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
Fuses, 100mA 250V SB 5X15 BULK
CAP 3.3PF 100V /-0.25PF NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 2700PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 3300PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 33PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 2200PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 220PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 220PF 50V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 330PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 330PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 24PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
20-Bit Buffer/Driver With 3-State Outputs 56-SSOP -40 to 85
CAP 100UF 63V ALUM ELECT, 20% LOW ESR SMD, 10X10.2
CAP 220PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 8200UF 450V ELECT SCREW TERM
GLASS TUBE FOR DS80 IRON PKG/4
SERV SWITCH USB COAX CPU CABLES 50 FT
SERV SWITCH USB COAX CPU CABLES 35 FT
512 KBIT (64KB X8) UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDIP28
64K X 8 OTPROM, 100 ns, PDSO28
64K X 8 OTPROM, 150 ns, PQCC32
64K X 8 OTPROM, 120 ns, PDIP28
64K X 8 OTPROM, 120 ns, PQCC32
64K X 8 OTPROM, 200 ns, PQCC32
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| UDZ2.0B UDZ5.6B UDZ UDZ7.5B UDZ5.1B UDZ10B UDZ11B |
40 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor 40 个字x 1 线5 x 7 点阵字符和光
CAP 0.1UF 50V 10% X7R AXIAL BULK S-MIL-PRF-39014
CAP 100PF 100V 5% NP0(C0G) RAD.10 .15X.15 TR-13
Zener diode
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| GRM319R72A104K |
Chip Monolithic Ceramic Capacitor 1206 X7R 0.1μF 100V
Chip Monolithic Ceramic Capacitor 1206 X7R 0.1レF 100V
|
Murata Manufacturing Co., Ltd.
|
| LSG3351 Q62703-Q2297 LSG_3351 LSG3351-HO |
3 mm (T1) MULTILED / Diffused
Fail-Safe Floating Electrode MLCC / FE-CAP / X7R Dielectric; Capacitance [nom]: 0.1uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance
3 mm (T1) MULTILED, Diffused
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
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