PART |
Description |
Maker |
IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM 256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分(12k × 8/256K × 16Falsh存储器(12k × 8/256K × 16位单5V的电源电压闪速存储器
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Fujitsu Limited Fujitsu, Ltd.
|
GS881E18BD-200IV GS881E36BGT-200V |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA165 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
CY7C1361C-133AXC CY7C1361C-133BGI CY7C1361C-133AJX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 9兆位56 × 36/512K × 18)流通过的SRAM 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
A67P9318E-4.2F A67P8336 A67P8336E A67P8336E-2.6 A6 |
DIODE ZENER SINGLE 500mW 5.6Vz 20mA-Izt 0.05 5uA-Ir 3Vr DO35-GLASS 5K/AMMO 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 1856 × 36 LVTTL,流水线ZeBL的SRAM GIGABASE 350 CAT5E PATCH 5 FT, SNAGLESS, WHITE 12k × 1856 × 36 LVTTL,流水线ZeBL的SRAM 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 512k × 1856 × 36 LVTTL,流水线ZeBL的SRAM 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 18256 × 36 LVTTL,流水线ZeBL的SRAM
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AMICC[AMIC Technology] AMIC Technology Corporation AMIC Technology, Corp.
|
CY7C1354CV25-225AXI CY7C1354CV25-167AXI CY7C1356CV |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18)流水线的SRAM的总线延迟TM架构 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18)流水线的SRAM的总线延迟,TM架构
|
Cypress Semiconductor Corp.
|
A67L9318E-4.2F A67L8336E A67L8336E-2.6 A67L8336E-2 |
512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 512k × 1856 × 36 LVTTL,流水线ZeBL的SRAM 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 1856 × 36 LVTTL,流水线ZeBL的SRAM DIODE ZENER SINGLE 500mW 5.1Vz 20mA-Izt 0.05 5uA-Ir 2Vr DO35-GLASS 5K/REEL
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
IS61LPS51218A IS61LPS51218A12 IS64LPS25636A IS61LP |
256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc
|
GS880F18BGT-5.5I GS880F18BGT-6.5 GS880F18BT GS880F |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS880F18BT-5.5IV GS880F18BT-5.5V GS880F18BT-6.5IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|