| PART |
Description |
Maker |
| PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOSField Effect Transistor
85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| 2SJ620 |
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC6101 TPC6.01 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
CONNECTOR ACCESSORY
Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2SK3314 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3388 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator, DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation
Toshiba Semiconductor
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| TPCS8211 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ460 2SJ460M 2SJ460M-T 2SJ460-T/JM 2SJ460/JM |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING P沟道MOS场效应晶体管高速开
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
Pch D-MOSFET SST 50V/0.1A
|
NEC, Corp.
NEC[NEC]
|
| TPCS8201 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
|
TOSHIBA[Toshiba Semiconductor]
|
| PTF10031 |
50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 50瓦，1.0 GHzGOLDMOS场效应晶体管
|
Ericsson Microelectronics
|
