PART |
Description |
Maker |
GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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CMX264 |
Frequency Domain Split Band Scrambler
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ETC CML Microcircuits
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GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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BB204B BB204 BB204G |
ER 35C 35#16 PIN PLUG VHF BAND, 14 pF, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 VHF variable capacitance double diodes 甚高频双可变电容二极
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PHILIPS[Philips Semiconductors] Philipss NXP Semiconductors N.V.
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1N5472A 1N5466C TX-1N5469C TX-1N5468B TX-1N5446C 1 |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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SLOTTEN-4-17 SLOTTEN-2-17 SLOTTEN-3-17 SLOTTEN-5-1 |
SHIELDED, 288 uH - 432 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 286 uH - 630 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 230 uH - 310 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 72 uH - 163 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 303 uH - 765 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 66 uH - 136 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 67.2 uH - 100.2 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 52.7 uH - 71.3 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 67.2 uH - 100.8 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 280 uH - 432 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 1.76 uH - 2.64 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 2.4 uH - 5.4 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 1.25 uH - 2.75 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 2.9 uH - 3.9 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 18.7 uH - 25.3 uH, VARIABLE INDUCTOR DIP-5
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Coilcraft, Inc.
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1M1409 1M5474B 1M5139B 1M5463B |
27 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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1SV277 |
VARIABLE CAPACITANCE DIODE (VCO FOR UH BAND RADIO)
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TOSHIBA[Toshiba Semiconductor]
|
MA4ST240-1141 MA4ST240-1146 |
S BAND, 3.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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1SV304 |
Variable Capacitance Diode (VCO for VHF Band Radio)
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TY Semicondutor
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