| PART |
Description |
Maker |
| MMBTA06G-AE3-R MMBTA06-AE3-R |
AMPLIFIER TRANSISTOR 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Unisonic Technologies Co., Ltd.
|
| KSD261 KSD261CGBU KSD261CGTANL KSD261CYBU KSD261CY |
LOW FREQUENCY POWER AMPLIFIER 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| KSD261CGTANL |
LOW FREQUENCY POWER AMPLIFIER 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| DDTB122LC-7-F DDTB142JC DDTB142TC DDTB122LC2 DDTB1 |
Prebiased Transistors
PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Diodes, Inc.
|
| DDTD133HC-7-F DDTD143EC DDTD113EC DDTD113EC09 DDTD |
Prebiased Transistors
500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3
NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
Diodes Inc.
|
| PDTB113ZT215 PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| BC817-16W Q62702-C2320 Q62702-C2323 Q62702-C2324 Q |
RES FIX, 324 OHM.125W 1% SMDA 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Silicon AF Transistor (For general AF applications High collector current High current gain) 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MMBTA43 MMBTA42 |
TRANSISTOR 500 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Vishay Semiconductors
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| BC817-25-MR BC817-40-MR BC817-25 BC817-40 |
NPN General Purpose Amplifier(NPN通用放大
晶体管BC817 - 25 MINIREEL 500
TRANSISTOR BC817-40 MINIREEL 500PCS
TRANSISTOR BC817-25 MINIREEL 500PCS
|
Fairchild Semiconductor Corporation
|
| MM1380 MM1380AW |
INSTRUMENTATION AMPLIFIER, 500 uV OFFSET-MAX, PDSO8
Sense Current Amplifier
|
MITSUMI ELECTRIC CO LTD
|
|
