| PART |
Description |
Maker |
| 222233840683 222233840684 222233840685 22223384168 |
CAPACITOR 68NF 300V
CAPACITOR 680NF 300V
CAPACITOR 6.8UF 300V
Low-Power MicroMonitor Chip
CAPACITOR 470NF 300V
CAPACITOR 1.0UF 300V
Power Monitor
CAPACITOR 15NF 300V
CAPACITOR 1.5UF 300V
CAPACITOR 22NF 300V
CAPACITOR 220NF 300V
CAPACITOR 33NF 300V
CAPACITOR 330NF 300V
CAPACITOR 3.3UF 300V
CAPACITOR 100NF 300V
CAPACITOR 2.2UF 300V
CAPACITOR 10NF 300V
256k Nonvolatile SRAM 电容3NF 300V
|
Vishay Intertechnology, Inc.
|
| IXGK120N60A3 IXGX120N60A3 |
GenX3 A3-Class IGBTS
|
IXYS Corporation
|
| IXGH30N120B3 IXGP30N120B3 IXGA30N120B3 |
GenX3 1200V IGBTs
|
IXYS Corporation
http://
|
| IXGH85N30C3 |
GenX3 300V IGBT
|
IXYS Corporation
|
| IXGH120N30B3 |
GenX3 300V IGBT
|
IXYS Corporation
|
| IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
|
International Rectifier, Corp.
|
| SGB02N60 SGP02N60 Q67040-S4504 Q67040-S4505 Q67041 |
FAST IGBT IN NPT TECHNOLOGY 快速IGBT技术在不扩散核武器条约
IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 2A 600V TO 252AA SMD IGBT
IGBTs & DuoPacks - 2A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| SGW10N60 SGW10N60A SGB10N60A SGP10N60A |
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 10A 600V TO220AB IGBT
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 10A 600V TO247AC IGBT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH |
From old datasheet system
GaAs Infrared Emitter
Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
CAP MICA 43PF 300V SMD 砷化镓红外发射器
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装（Vcbo00V，Vceo00V，Vebo6V的）（不适用沟道增强型，高电压功率马鞍山场效应管（Vcbo00V，Vceo00V，Vebo6V的）
|
SemeLAB
SEME-LAB[Seme LAB]
Motorola Mobility Holdings, Inc.
|
