| PART |
Description |
Maker |
| SI4392DY SI4392DY06 |
N-Channel Reduced Qg, Fast Switching WFET?
N-Channel Reduced Qg, Fast Switching WFET庐
N-Channel Reduced Qg, Fast Switching WFET㈢
|
Vishay Siliconix
|
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| STGW30NC60WD STGW30NC60WD07 GW30NC60WD |
STGW30NC60WD
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH?/a> IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH垄芒 IGBT
|
STMicroelectronics
|
| SI7390DP SI7390DP-T1-E3 |
9 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel 30-V (D-S) Fast Switching WFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SI4300DY SI4300DY-TI |
N-Channel Reduced Qg, Fast Switching MOSFET with Schottky
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
|
VISAY[Vishay Siliconix]
|
| GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| SI7112DN |
N-Channel 30 V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7806BDN-T1-E3 SI7806BDN |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4884DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay
|
