PART |
Description |
Maker |
NESG2021M16-T3 NESG2021M16-T3-A NESG2021M16 NESG20 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
NESG210719-T1-A NESG210719-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
California Eastern Labs
|
NESG250134-AZ NESG250134-EV09 NESG250134-T1-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE) 邻舍npn型硅锗射频晶体管介质输出功率AMPLIFIVATION00mW的)3针奥尔MINIMOLD34包)
|
Duracell California Eastern Laboratories, Inc.
|
NESG240033 NESG240033-A NESG240033-T1B NESG240033- |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
NEC
|
NESG240034 NESG240034-A NESG240034-T1 NESG240034-T |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
NEC
|
UPA863TD-A UPA863TD-T3-A |
NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD
|
California Eastern Labs
|
UPA801 UPA801T UPA801TC UPA801TC-T1 PA801TC |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD NPN Epitaxial Transisitor(NPN外延晶体
|
NEC[NEC] NEC Corp.
|
NESG2030M04-T2 NESG2030M04 |
NONLINEAR MODEL NPN SiGe HIGH FREQUENCY TRANSISTOR NPN SiGe HIGH FREQUENCY TRANSISTOR npn型硅锗高频晶体管
|
NEC[NEC] NEC, Corp.
|
THN4201 THN4201E THN4201KF THN4201U THN4201Z |
NPN SiGe RF TRANSISTOR
|
Tachyonics CO,. LTD
|
THN420Z |
SiGe NPN Transistor
|
AUK corp
|
THN4301E THN4301U THN4301Z |
SiGe NPN Transistor
|
AUK corp
|
START620 |
NPN SIGE RF TRANSISTOR
|
SGS Thomson Microelectronics
|