PART |
Description |
Maker |
SST25VF040-20-4C-QAE SST25VF040-20-4C-S2AE SST25VF |
4 Mbit SPI Serial Flash 512M X 8 FLASH 2.7V PROM, PDSO8
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Silicon Storage Technology, Inc Silicon Storage Technol...
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HY27UG164GDM-UPEB HY27UG084GDM-UPEB HY27UG164G2M-T |
256M X 16 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52 512M X 8 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52 256M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
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Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
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DP5Z1MM16PI3-12C DP5Z1MM16PJ3-12B DP5Z1MW16PA3-12B |
1M X 16 FLASH 5V PROM, 120 ns, CQIP48 HERMETIC SEALED, STRAIGHT, SLCC-48 1M X 16 FLASH 5V PROM, 120 ns, CQCC48 1M X 16 FLASH 5V PROM, 120 ns, CPGA50 1M X 16 FLASH 5V PROM, 150 ns, CQCC48
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JS48F4400P0VB00 PF48F2000P0ZBQ0A JS28F128P30B85B P |
32M X 16 FLASH 1.8V PROM, 95 ns, PDSO56 14 X 20 MM, LEAD FREE, TSOP-56 4M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 8 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88 8M X 16 FLASH 1.8V PROM, 88 ns, PDSO56 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
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Numonyx Asia Pacific Pte, Ltd.
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AS8FLC1M32BQT-90_IT AS8FLC1M32BQT-90_Q AS8FLC1M32B |
Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array 1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HIP-66 1M X 32 FLASH 3V PROM, 100 ns, CQFP68
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http:// Austin Semiconductor, Inc MICROSS COMPONENTS
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AT49F8192A-12TI AT49F8192A-70CC AT49F8192A-70TC |
1M X 8 FLASH 5V PROM, 120 ns, PDSO48 1M X 8 FLASH 5V PROM, 70 ns, PBGA48 70NS, TSOP, COM TEMP(FLASH)
|
ATMEL CORP
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S29GL064N90DFI040 S29GL064N90BFI033 S29GL032N90TFI |
4M X 16 FLASH 3V PROM, 90 ns, PBGA64 9 X 9 MM, LEAD FREE, FBGA-64 4M X 16 FLASH 3V PROM, 90 ns, PBGA48 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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Spansion, Inc. SPANSION LLC
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NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
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ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
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AM29SL160CB-90WCC AM29SL160CB-100WCI AM29SL160CB-1 |
1M X 16 FLASH 1.8V PROM, 90 ns, PBGA48 1M X 16 FLASH 1.8V PROM, 100 ns, PBGA48 1M X 16 FLASH 1.8V PROM, 150 ns, PDSO48
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ADVANCED MICRO DEVICES INC
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