| PART |
Description |
Maker |
| CJF15028 |
36.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE.
|
Continental Device India Limited
|
| PJE8050CT PJE8050CX |
120V; 0.5A; NPN epitaxial silicon transistor
|
PROMAX-JOHNTON
|
| ZXTN04120HFFTA ZXTN04120HFF |
120V, SOT23F, NPN medium power Darlington transistor
|
ZETEX[Zetex Semiconductors]
|
| ZDT694QTA |
120V DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SM-8
|
Diodes Incorporated
|
| MJ11016G MJ11015G MJ11012G |
Bipolar Power TO3 NPN 30A 120V; Package: TO-204 (TO-3); No of Pins: 2; Container: Tray; Qty per Container: 100 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
High-Current Complementary Silicon Transistors
|
Rectron Semiconductor
|
| FCX605 FCX605TA |
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
NPN Darlington Transistor
|
http://
Zetex Semiconductors
|
| 2SC1980R 2SC1980T |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20MA I(C) | TO-92 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 20mA的一（c）|2
|
Panasonic, Corp.
|
| 2SC4934E |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 200MA I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 200mA的一（c）|26
|
Leshan Radio Company, Ltd.
|
| FQPF32N12V2 FQP32N12V2 |
120V N-Channel Advanced QFET V2 series
120V N-Channel MOSFET 32 A, 120 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| CSB649AC CSD669AC CSB649D |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 1.5AI（丙）|126
|
Spansion, Inc.
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
