| PART |
Description |
Maker |
| IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
| STB11NM60-1 STB11NM60T4 |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
STMICROELECTRONICS
|
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| S4402 |
MOSFET, Switching; VDSS (V): 600; ID (A): 16; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.475; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| NDF10N60ZG |
10A 600V 0.65 Ohm Single N-Channel TO-220FP MOSFET 6 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
ON Semiconductor
|
| STD1HN60K3 STU1HN60K3 |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package
|
ST Microelectronics
|
| IRFR9120 IRFU9120 IRFR91209A |
5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FRM450H FRM450D FN3236 FRM450R |
10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs
10A/ 500V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| 2SK3567 |
3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| FQB12N60CTM |
12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
|
