PART |
Description |
Maker |
K4X56323PG-7EC30 K4X56323PG-8EC30 K4X56323PG-8GC30 |
8M X 32 DDR DRAM, 6 ns, PBGA90 FBGA-90 8M X 32 DDR DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
|
Samsung Semiconductor Co., Ltd.
|
K4S56323PF-FG K4S56323PF-F90 K4S56323PF-F75 K4S563 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
K4M28323PH-HG1L0 K4M28323PH-FE900 K4M28323PH-FE1L0 |
4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 ROHS COMPLIANT, FBGA-90 4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
|
Elite Semiconductor Memory Technology, Inc. Samsung Semiconductor Co., Ltd.
|
HYI18T256160BF-25F HYI18T256160BC-25F HYB18T256160 |
16M X 16 DDR DRAM, 0.4 ns, PBGA84 GREEN, PLASTIC, TFBGA-84 16M X 16 DDR DRAM, 0.4 ns, PBGA84 PLASTIC, TFBGA-84 16M X 16 DDR DRAM, 0.45 ns, PBGA84 16M X 16 DDR DRAM, 0.5 ns, PBGA84 64M X 4 DDR DRAM, 0.45 ns, PBGA60
|
Qimonda AG
|
MT48H4M32LFB5-75ITK |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
|
K4S28323LE-FS750 |
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
|
K4S643233H-C K4S643233H-F K4S643233H-F1H K4S643233 |
2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 Mobile-SDRAM 移动SDRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
H5PS1G63EFR H5PS1G43EFR H5PS1G83EFR H5PS1G43EFR-E3 |
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, PBGA60 128M X 8 DDR DRAM, PBGA60
|
http:// HYNIX SEMICONDUCTOR INC
|
V58C2512164SBI5 V58C2512804SBJ5 V58C2512804SBLE5 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 64M X 8 DDR DRAM, 0.7 ns, PBGA60 64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|