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K4X56323PI-8EC30 - 8M X 32 DDR DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90

K4X56323PI-8EC30_3885731.PDF Datasheet


 Full text search : 8M X 32 DDR DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
 Product Description search : 8M X 32 DDR DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90


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K4X56323PG-7EC30 K4X56323PG-8EC30 K4X56323PG-8GC30 8M X 32 DDR DRAM, 6 ns, PBGA90 FBGA-90
8M X 32 DDR DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
Samsung Semiconductor Co., Ltd.
K4S56323PF-FG K4S56323PF-F90 K4S56323PF-F75 K4S563 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
K4M28323PH-HG1L0 K4M28323PH-FE900 K4M28323PH-FE1L0 4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 ROHS COMPLIANT, FBGA-90
4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
Elite Semiconductor Memory Technology, Inc.
Samsung Semiconductor Co., Ltd.
HYI18T256160BF-25F HYI18T256160BC-25F HYB18T256160 16M X 16 DDR DRAM, 0.4 ns, PBGA84 GREEN, PLASTIC, TFBGA-84
16M X 16 DDR DRAM, 0.4 ns, PBGA84 PLASTIC, TFBGA-84
16M X 16 DDR DRAM, 0.45 ns, PBGA84
16M X 16 DDR DRAM, 0.5 ns, PBGA84
64M X 4 DDR DRAM, 0.45 ns, PBGA60
Qimonda AG
MT48H4M32LFB5-75ITK 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90

K4S28323LE-FS750 4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90

K4S643233H-C K4S643233H-F K4S643233H-F1H K4S643233 2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
Mobile-SDRAM 移动SDRAM
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
H5PS1G63EFR H5PS1G43EFR H5PS1G83EFR H5PS1G43EFR-E3 1Gb DDR2 SDRAM
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http://
HYNIX SEMICONDUCTOR INC
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