| PART |
Description |
Maker |
| NTMFS4121N NTMFS4121NT1G NTMFS4121NT3G |
Power MOSFET 30 V, 29 A, Single N-Channel SO-8 Flat Lead ; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 5000 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Power MOSFET 30 V, 29 A, Single N-Channel SO-8 Flat Lead ; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead
|
ON Semiconductor
|
| QRSB165001 |
880 A, 11000 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| CCS-18T13O-TD CCS-18T16O-T CCS-18T14O-TD CCS-18T15 |
0 MHz - 11000 MHz RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH
0 MHz - 11000 MHz RF/MICROWAVE SGL POLE SIX THROW SWITCH
0 MHz - 11000 MHz RF/MICROWAVE SGL POLE FOUR THROW SWITCH
0 MHz - 11000 MHz RF/MICROWAVE SGL POLE FIVE THROW SWITCH
0 MHz - 12000 MHz RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH
0 MHz - 12000 MHz RF/MICROWAVE SGL POLE FIVE THROW SWITCH
|
Teledyne Technologies, Inc.
TELEDYNE TECHNOLOGIES INC
|
| ATT-563F-60-SCO-07 ATT-0563-60-SCO-07 ATT-563M-19- |
0 MHz - 2000 MHz RF/MICROWAVE FIXED ATTENUATOR STAINLESS STEEL
0 MHz - 11000 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Electronic Theatre Controls, Inc.
|
| LZ931000 LZ9813000 LZ9811000 LZ9G1900 LZ95300 LZ95 |
FPGA, 1010 GATES
FPGA, 13000 GATES
FPGA, 11000 GATES
FPGA, 1900 GATES
FPGA, 315 GATES
FPGA, 1680 GATES
FPGA, 6075 GATES
FPGA, 5000 GATES
FPGA, 8370 GATES
FPGA, 650 GATES
|
SHARP ELECTRONICS CORP
|
| DRT071R020F031B DRT055R020F024B MURATAMANUFACTURIN |
CYLINDRICAL TYPE DIELECTRIC RESONATOR, 8400 MHz - 9100 MHz
CYLINDRICAL TYPE DIELECTRIC RESONATOR, 11000 MHz - 11900 MHz
DISC TYPE DIELECTRIC RESONATOR, 17500 MHz - 18900 MHz
DISC TYPE DIELECTRIC RESONATOR, 18900 MHz - 20400 MHz
|
MURATA MANUFACTURING CO LTD
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| ISB-A27-0 |
150 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Ultrathin Miniature Package 4-channel N-channel MOSFET Array
|
Sanyo Semicon Device
|
| CGR103U075U4L4PHS CGR323U075X4L4PH CGR213U016R3C4P |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 10000 uF, STUD MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 10000 uF, CHASSIS MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 32000 uF, CHASSIS MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 21000 uF, STUD MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 21000 uF, CHASSIS MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 3300 uF, CHASSIS MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 32000 uF, STUD MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 11000 uF, CHASSIS MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 16000 uF, STUD MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 3200 uF, STUD MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 11000 uF, STUD MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 16000 uF, CHASSIS MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 3300 uF, STUD MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 210000 uF, STUD MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 120000 uF, STUD MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 210000 uF, CHASSIS MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 3200 uF, CHASSIS MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 120000 uF, CHASSIS MOUNT RADIAL LEADED, CAN
|
Aerovox, Corp.
|
| FDS8926A |
Dual N-Channel Enhancement Mode Field Effect Transistor 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
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