| PART |
Description |
Maker |
| GL41YHE3/97 BYM10-600-E3/96 |
1 A, 1600 V, SILICON, SIGNAL DIODE, DO-213AB ROHS COMPLIANT, PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB
|
Vishay Beyschlag
VISHAY SEMICONDUCTORS
|
| RL153G-F 1N4007GH05 1N4007GH03-2 1N4005GH08 |
1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
RECTRON LTD
|
| 10ELS6TA1B2 |
0.77 A, 600 V, SILICON, SIGNAL DIODE
|
NIHON INTER ELECTRONICS CORP
|
| JANS2N2906A JAN2N2907A JANTX2N2907A JANTX2N2907AL |
PNP SMALL SIGNAL SILICON TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
64 x 18 asynchronous FIFO memory 56-SSOP 0 to 70 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| GPP10J-E3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
|
VISHAY SEMICONDUCTORS
|
| UF1J-GT3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
|
SENSITRON SEMICONDUCTOR
|
| FS1J-LTP |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
|
MICRO COMMERCIAL COMPONENTS
|
| RGF1J-E3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214BA
|
VISHAY SEMICONDUCTORS
|
| SF10JG |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 PLASTIC PACKAGE-2
|
Vishay Beyschlag
|
| ERA22-02 ERA22-06 |
0.5 A, 200 V, SILICON, SIGNAL DIODE
0.5 A, 600 V, SILICON, SIGNAL DIODE
|
FUJI ELECTRIC CO LTD
|
| RG2A AG01 |
1 A, 600 V, SILICON, SIGNAL DIODE
0.7 A, 400 V, SILICON, SIGNAL DIODE
|
|
| 1N4934G IN4937 1N4933G 1N4935G 1N4936G 1N4937G |
FAST RECOVERY GLASS PASSIVATED RECTIFIER 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
RECTRON[Rectron Semiconductor]
|
|
