| PART |
Description |
Maker |
| CW201212-R33J CW201212-12NJ CW201212-R56J CW201212 |
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.91 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Inductor Type:High Frequency; Inductance:13.3nH; Inductance Tolerance: /- 5 %; Current Rating:600mA; Series:CW201212; Package/Case:0805; Core Material:Alumina Ceramic; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| SDR0503-390KL SDR0503-821KL SDR0503-122JL SDR0503- |
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 1200 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 5600 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Series:SDR0503; Inductance:47uH; Inductance Tolerance: /- 10 %; Q Factor:20; Self Resonant Frequency:14MHz; Terminal Type:PCB Surface Mount; Core Material:Ferrite DR; Current Rating:750mA; Mounting Type:Surface Mount
Power Inductor; Inductor Type:Power; Inductance:3.3mH; Inductance Tolerance: 5 %; Current Rating:0.062A; Series:SDR0503; Core Material:Ferrite DR; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Q Factor:40 RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| BDP948 BDP950 Q62702-D1338 Q62702-D1336 |
From old datasheet system
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
|
| BDP947 BDP949 Q62702-D1337 Q62702-D1335 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) NPN硅自动对焦功率晶体管输出级驱动器和高集电极电流高电流增益（为自动
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| NTE29 NTE30 |
50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
Silicon Complementary Transistors High Power, High Current Switch
|
NTE[NTE Electronics]
|
| BFY50 BFY51 BFY52 |
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
NPN medium power transistors
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 2SD1412A EE08319 |
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)
From old datasheet system
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SD1411A EE08318 |
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)
From old datasheet system
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
