| PART |
Description |
Maker |
| HYMP125S64CR8-C4 HYMP125S64CR8-S5 HYMP125S64CR8-S6 |
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
1200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
http://
|
| HYMP532S64CLP6-S6 HYMP532S64CLP6-S5 HYMP564S64CLP6 |
32M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| HYMP164S64AP6-Y5 HYMP112S64AP6-Y5 |
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HMP451S6MMP8C-S6 HMP451S6MMP8C-Y5 |
DDR DRAM MODULE, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| HYMP112S64P8-C4 HYMP112S64P8-Y5 |
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| HYS64D32000EDL-6-D |
32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
|
QIMONDA AG
|
| HYS64D32000HDL-5-C HYS64D64020HDL-5-C |
200-Pin Small-Outline Dual-In-Line Memory Modules 32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200
200-Pin Small-Outline Dual-In-Line Memory Modules 64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200
|
http://
Qimonda AG
|
| HYMP125P72CP4L-C4 HYMP41GP72CNP4L-C4 HYMP41GP72CNP |
240pin DDR2 VLP Registered DIMMs
512M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, DIMM-240
|
Hynix Semiconductor, Inc.
|
| HYMD512646B8-H HYMD512646B8J-D43 HYMD512646B8J-J H |
1184pin Unbufferd DDR SDRAM DIMMs
128M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184
|
Hynix Semiconductor
http://
Foxconn Technology Co., Ltd.
|
| M392T2863CZA-CF7 M392T5660CZA-CCC M392T5660CZA-CD5 |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
512M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 ROHS COMPLIANT, DIMM-240
512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Samsung Semiconductor Co., Ltd.
|
| W3HG2128M72EER534D4MG |
256M X 72 MULTI DEVICE DRAM MODULE, ZMA200
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
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