| PART |
Description |
Maker |
| CY7C1292DV18-200BZXC CY7C1292DV18-167BZXC CY7C1294 |
9-Mbit QDR- IISRAM 2-Word Burst Architecture 512K X 18 QDR SRAM, 0.45 ns, PBGA165
9-Mbit QDR- IISRAM 2-Word Burst Architecture 512K X 18 QDR SRAM, 0.5 ns, PBGA165
9-Mbit QDR- IISRAM 2-Word Burst Architecture 256K X 36 QDR SRAM, 0.5 ns, PBGA165
9-Mbit QDR- IISRAM 2-Word Burst Architecture 256K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682 |
2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
2M X 36 QDR SRAM, 0.5 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| CY7C1360C-166AXC CY7C1360C-166BGC CY7C1360C-166BZI |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 QDR SRAM, 3 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 QDR SRAM, 3 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 3.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300 |
72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| K7Q161854A-FC16 K7Q163654A-FC20 K7Q161854A-FC20 K7 |
1M X 18 QDR SRAM, 3 ns, PBGA165
512Kx36-bit, 1Mx18-bit QDR SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| WPS512K8VB-15RJI WPS512K8VB-15RJM WPS512K8VB-17RJI |
3.3V 512K x 8 SRAM, 15ns
3.3V 512K x 8 SRAM, 17ns
3.3V 512K x 8 SRAM, 20ns
|
White Electronic Designs
|
| AT60142E-DC15SMV AT60142E-DC15SSB AT60142E-DC20M A |
IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF
SWITCH
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 15 ns, DFP36
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP36
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| CY14B108M-ZSP20XC CY14B108K CY14B108K-ZS20XC CY14B |
1M X 8 NON-VOLATILE SRAM, 20 ns, PDSO44
8 Mbit (1024K x 8/512K x 16) nvSRAM with Real Time Clock; Organization: 1Mb x 8; Vcc (V): 2.7 to 3.6 V; Density: 8 Mb; Package: TSOP
512K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
512K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
512K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
|
CYPRESS SEMICONDUCTOR CORP
Cypress Semiconductor, Corp.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| AS7C33512PFD32_36A AS7C33512PFD32_36A.V1.3 AS7C335 |
3.3V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.4 ns, PQFP100
3.3V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.8 ns, PQFP100
From old datasheet system
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
