| PART |
Description |
Maker |
| W947D2HBJX5I W947D2HBJX6E W947D2HBJX5E W947D2HBJX6 |
128Mb Mobile LPDDR
4M X 32 DDR DRAM, 5 ns, PBGA90
8M X 16 DDR DRAM, 5 ns, PBGA60
|
Winbond
WINBOND ELECTRONICS CORP
|
| W989D6CBGX6E W989D6CBGX6I W989D6CBGX7E W989D2CBJX6 |
512Mb Mobile LPSDR
|
Winbond
|
| KBE00F005A-D411 KBE00F005A |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG[Samsung semiconductor]
|
| MT46H16M32LG MT46H32M16LF MT46H32M16LFBF-6ITC MT46 |
512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
|
Micron Technology
|
| W987D6CKJX5G W947D6CKJX5G W989D6CKJX5G W949D6CKJX5 |
512Mb Mobile LPSDR
512Mb Mobile LPSDR
|
Winbond
|
| DOM44S3R288 DOM44S3R224 |
44Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 44Pin盘模块Min.16MBMax.512MB，真IDE接口
|
Hanbit Electronics Co., Ltd.
|
| HYM72V64736T8 HYM72V64736LT8-H |
64Mx72|3.3V|K/H|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Samsung Semiconductor Co., Ltd.
HYNIX SEMICONDUCTOR INC
|
| IS42SM32160C-75BLI IS42SM32160C-75BL-TR IS42SM3216 |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
512Mb Mobile Synchronous DRAM
|
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
| TS512MJFV60 |
512MB USB2.0 JetFlash?/a>
512MB USB2.0 JetFlash垄芒
|
Transcend Information. Inc.
|
| HFDOM44P-016S1 HFDOM44P-032S2 HFDOM44P-032SX HFDOM |
44Pin Flash Disk Module Min.16MB~Max.512MB, True IDE Interface Mode, 3.3V/5.0V Operating 44Pin盘模块Min.16MBMax.512MB，真正的IDE接口模式3.3V/5.0V工作
44Pin Flash Disk Module Min.16MB~Max.512MB, True IDE Interface Mode, 3.3V/5.0V Operating 44Pin盘模块Min.16MBMax.512MB，真正的IDE接口模式.3V/5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| HYE18L128160BF-7.5 |
DRAMs for Mobile Applications 128-Mbit Mobile-RAM
|
http://
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