PART |
Description |
Maker |
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
V54C3256164VDUF6I V54C3256404VDUT7I V54C3256164VDU |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
PROMOS TECHNOLOGIES INC
|
K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd. Omron Electronics, LLC SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MC-4516CD641XS-A10 MC-4516CD641XS-A80 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 SOCKET TYPE, SODIMM-144 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory, Inc.
|
MT48G16M16LFBG-10IT MT48G16M16LFBG-75 MT48G16M16LF |
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 14 MM, LEAD FREE, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, LEAD FREE, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 11 X 8 MM, LEAD FREE, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 11 X 8 MM, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 14 MM, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54
|
PCA Electronics, Inc.
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
V54C3256164VDLF7PC V54C3256404VDLF7PC V54C3256804V |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
ProMOS Technologies, Inc. PROMOS TECHNOLOGIES INC
|
IS42SM32160C-75BLI IS42SM32160C-75BL-TR IS42SM3216 |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 512Mb Mobile Synchronous DRAM
|
天津新技术产业园区管理委员会 INTEGRATED SILICON SOLUTION INC Integrated Silicon Solu...
|
UPD4516161A |
16M Bit Synchronous DRAM
|
NEC
|
V54C3256164VHUJ7I |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
|
PROMOS TECHNOLOGIES INC
|
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