| PART |
Description |
Maker |
| APT40M75JN APT40M90JN |
POWER MOS IV 400V 56.0A 0.075 Ohm / 400V 51.0A 0.090 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT50M75JFLL |
POWER MOS 7 500V 52A 0.075 Ohm
|
Advanced Power Technology
|
| BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
| STC08DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 8 A - 0.075 OHM
|
STMICROELECTRONICS[STMicroelectronics]
|
| STC08DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1500 V - 8 A - 0.075 Ohm
|
ST Microelectronics
|
| STC08DE150HV C08DE150HV |
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| APT30M75BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 300V 44A 0.075 Ohm
|
Advanced Power Technology Ltd.
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| LOB1-R0523FI LOB1-R0221FI LOB1-R022JI LOB1-R00562F |
RESISTOR, 1 W, 1 %, 0.0523 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0221 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.022 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00562 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00604 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.0062 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0147 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00523 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0232 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0332 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00576 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0059 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00649 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.0051 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00698 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.0068 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00511 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0422 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.047 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0237 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0133 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0226 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00665 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0357 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00549 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.005 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00634 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.005 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00619 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0475 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00681 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
Welwyn Components, Ltd.
|
| OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展|5A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五（巴西）国际消费电子展|9A一（c）|园区
|
Electronic Theatre Controls, Inc.
OKI SEMICONDUCTOR CO., LTD.
|
| NS471Q6 NS471B5 |
RES THNFLM NET 9M OHM/900K OHM/90K OHM/9K OHM/900 OHM/100 OH - Bulk
CNS 471 Decade Divider, Single-In-Line Through Hole Thin Film Resistor Networks (Standard)
|
Vishay Sfernice
|
| FQD20N06LE FQU20N06LE FQD20N06LETM |
60V N-Channel Logic level QFET (Built in ESD Protection Diode)
60V LOGIC N-Channel MOSFET 17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
|
