| PART |
Description |
Maker |
| HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT |
8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
|
Infineon Technologies AG
|
| HY5PS121621AF HY5PS121621AF-C3 HY5PS121621AF-C4 HY |
512Mb DDR2 SDRAM
32M X 16 DDR DRAM, PBGA84 ROHS COMPLIANT, FBGA-84
32M X 16 DDR DRAM, PBGA84 FBGA-84
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
256Mb H-die DDR SDRAM Specification
|
Atmel, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HB54A2568FM-A75B HB54A2569FM-A75B HB54A2569FM-10B |
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
256MB Unbuffered DDR SDRAM DIMM
|
ELPIDA MEMORY INC
|
| M312L3223CT0 M312L3223CT0-LB3 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
M312L3223CT0 DDR SDRAM 184pin DIMM Data Sheet
|
Samsung Electronic
|
| MT8VDDT3264HDG-40BXX MT8VDDT3264HDY-265XX MT8VDDT3 |
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
|
| W9751G6JB-25I W9751G6JB-18 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
32M X 16 DDR DRAM, 0.35 ns, PBGA84
|
WINBOND ELECTRONICS CORP
|
| W9751G6IB-25 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
|
WINBOND ELECTRONICS CORP
|
| HY5DU56822ELF-J |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| D5116ADTA-5CLI-E |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
ELPIDA MEMORY INC
|
| W3E32M72SR-250SBC |
32M X 72 DDR DRAM, 0.8 ns, PBGA208
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
|
