| PART |
Description |
Maker |
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications
TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba.
TOSHIBA[Toshiba Semiconductor]
|
| MRF1511T1 |
RF Power Field Effect Transistor
|
Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
|
| MTM15N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| MTH6N60 MTH6N55 |
Power Field Effect Transistor
|
New Jersey Semi-Conduct...
|
| MTM25P10 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola
|
| MTM25N10 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
| MTP2N90 MTM2N85 MTM2N90 MTP2N85 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| D84DN2 D84DM2 |
FIELD EFFECT POWER TRANSISTOR
|
New Jersey Semi-Conduct...
|
