PART |
Description |
Maker |
MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3 |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs RF Power Field Effect Transistors
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
MRF5P21180R6 |
2170 MHz, 38 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
MRF5S21130HSR3 MRF5S21130HR3 |
2170 MHz, 28 W AVG., 28 V, 2 x W–CDMA, Lateral N–Channel RF Power MOSFET To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
|
Freescale (Motorola) Freescale Semiconductor, Inc 飞思卡尔半导体(中国)有限公司
|
MAFR-000087-US1C1T |
Single Junction Drop-In Circulator 2110 MHz-2170 MHz
|
M/A-COM Technology Solutions, Inc.
|
MHV5IC2215NR2 |
2170 MHz, 23 dBm, 28 V Single N鈥揅DMA
|
MOTOROLA
|
MRF5S19100L MRF5S19100LR3 MRF5S19100LSR3 |
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs 1990 MHz, 22 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
MHL21336 |
MHL21336 2110-2170 MHz, 3 W, 31 dB RF Linear LDMOS Amplifier
|
Motorola
|
MRF21120R6 |
2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET
|
Freescale (Motorola)
|
PTF210901 PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
PTFA210601E PTFA210601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|