| PART |
Description |
Maker |
| MX29LV640BUXBI-90G MX29LV640BUTI-12G MX29LV640BUTC |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
| S29AL016J55TFIR10 S29AL016J55FFIR20 S29AL016J55TFI |
1M X 16 FLASH 3V PROM, 55 ns, PDSO48 LEAD FREE, MO-142DDD, TSOP-48
1M X 16 FLASH 3V PROM, 55 ns, PBGA64
1M X 16 FLASH 3V PROM, 55 ns, PBGA48
1M X 16 FLASH 3V PROM, 55 ns, PDSO56
|
Spansion, Inc.
SPANSION LLC
|
| K8D6316UBM-TI08 K8D638UTM-DI09 K8D638UTM-FC09 K8D6 |
4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
http://
|
| HY27UA081G1M HY27SA1G1M HY27SA161G1M-TPCB |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
64M X 16 FLASH 1.8V PROM, 12000 ns, PDSO48
|
Hynix Semiconductor Inc.
|
| TE28F256J3F105A RC28F256J3F95 |
16M X 16 FLASH 2.7V PROM, 105 ns, PDSO56
16M X 16 FLASH 2.7V PROM, 95 ns, PBGA64
|
NUMONYX
|
| KFG1216D2M-DED KFG1216Q2M-DEB KFG1216Q2M-DED KFG12 |
RSM, TKF 15K 1/16W 5% 040
FLASH MEMORY 闪存
.025 SOCKET STRIPS
64M X 16 FLASH 1.8V PROM, 76 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| PF48F4444PPVTQ0 |
64M X 16 FLASH 1.8V PROM, 88 ns, PBGA80
|
NUMONYX
|
| PF58F0031M0Y1BE |
64M X 16 FLASH 1.8V PROM, PBGA105
|
NUMONYX
|
| HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
3.3V Differential Transceiver 8-PDIP -40 to 85
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
COILTRONICS RoHS Compliant: Yes 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| S29GL512N S29GL256N90FFI010 S29GL256N90FFIV20 S29G |
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 32M X 16 FLASH 3V PROM, 100 ns, PBGA64
JT 13C 13#22M PIN PLUG 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 80 ns, PDSO56
MirrorBit Flash Family MirrorBit闪存系列
Replaced by PTB48520W : 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
JT 13C 13#22D SKT PLUG
|
Spansion, Inc.
Spansion Inc.
ETC
|
| MX26F640J3TC-10 |
64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
|
Macronix International Co., Ltd.
|
| AM29DL16XC AM29DL164CB80WCI AM29DL164CB120WCE AM29 |
Am29DL16xC - 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only. Simultaneous Operation Flash Memory Am29DL16xC - 16兆位米8 1个M x 16位）.0伏的CMOS只。同时作业闪
2M X 8 FLASH 3V PROM, 80 ns, PBGA48
2M X 8 FLASH 3V PROM, 120 ns, PBGA48
2M X 8 FLASH 3V PROM, 90 ns, PBGA48
|
AMIC Technology, Corp.
ADVANCED MICRO DEVICES INC
|
