PART |
Description |
Maker |
2SB1011 |
Power Device - Power Transistors - General-Purpose power amplification Silicon PNP Transistor Silicon PNP triple diffusion planar type
|
Panasonic Corporation
|
2SB1645 |
Silicon PNP triple diffusion planar type Darlington(For power amplification) 8 A, 160 V, PNP, Si, POWER TRANSISTOR
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
2SD2137A 2SB1417 2SB1417A 2SD2137 |
Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
2SB1631 |
Silicon PNP epitaxial planar type(For power amplification) 3 A, 60 V, PNP, Si, POWER TRANSISTOR
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
BD242 BD242C BD242A BD242B |
3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220 PNP SILICON POWER TRANSISTORS
|
Power Innovations International, Inc. POINN[Power Innovations Ltd] Power Innovations Limited
|
2N4919G |
Bipolar Power C77 PNP 3A 60V; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA
|
ON Semiconductor
|
MJL4302A MJL4281A |
Complementary NPN-PNP Silicon Power Bipolar Transistors 15 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-264AA From old datasheet system POWER TRANSISTOR, NPN 350V Audio Transistor, PNP 350V Audio Transistor, NPN
|
ON Semiconductor ONSEMI
|
BD544 BD544C BD544A BD544B |
PNP SILICON POWER TRANSISTORS ECONOLINE: RI - Custom Solutions Available- 1kVDC Isolation- No Extern. Components Required- UL94V-0 Package Material- No Heatsink Required- Efficiency to 87% 8 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220
|
http:// POINN[Power Innovations Ltd] Power Innovations Limited Power Innovations International, Inc.
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|