| PART |
Description |
Maker |
| MMSF10N03Z MMSF10N03Z_D ON2249 |
SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
Medium Power Surface Mount Products
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| SP4-2512/883 SP2-2512/883 SP4-2510-2 SP3-2512-2 SP |
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20 CERAMIC, LCC-20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, MBCY8 METAL CAN-8
OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, PDIP8
|
Ecliptek, Corp.
|
| NTR4003N NTR4003NT1G NTR4003NT3G |
30V N-Channel PowerTrench MOSFET 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Power MOSFET 30 V, 0.56 A. Single N-Channel SOT-23 Package; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23
|
3M Company
ON Semiconductor
|
| HY27SS08561M-FPCP HY27SS08561M-FCP |
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
|
Hynix Semiconductor, Inc.
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| HFA1102Y |
OP-AMP, 10000 uV OFFSET-MAX, UUC8
|
HARRIS SEMICONDUCTOR
|
| HMC611 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
Hittite Microwave Corporation
|
| 18106C |
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR
|
C&D TECHNOLOGIES INC
|
| HMC611LP4E HMC611LP4 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
HITTITE[Hittite Microwave Corporation]
|
| M100FF5 |
10000 V rectifier 10-40 mA forward current,50 ns recovery time
|
Voltage Multipliers, Inc.
|
| XCS30-3BGG256I |
FPGA, 576 CLBS, 10000 GATES, PBGA256
|
XILINX INC
|
|
