| PART |
Description |
Maker |
| FR1ZZ-TP FR1ZZP FR1020GP |
1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AA HSMB, 2 PIN
1 Amp Glass Passivated Rectifier 1200 to 2000 Volts 1 A, 2000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
|
| S1Q S1ZZ |
1 Amp Silicon Rectifier 1200 to 2000 Volts 1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AA
|
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
|
| S1ZZ |
1 A, 2000 V, SILICON, SIGNAL DIODE, DO-215AA SMBG, 2 PIN
|
Microsemi, Corp.
|
| SXF6521 |
2,000 V - 5,000 V Rectifiers 0.15 A - 0.50 A Forward Current 70 ns Recovery Time 0.5 A, 2000 V, SILICON, SIGNAL DIODE
|
Voltage Multipliers, Inc.
|
| 2SK2530 2SK2530TP-FA |
2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| KSC2328AOBU |
NPN Epitaxial Silicon Transistor; Package: TO-92L; No of Pins: 3; Container: Bulk 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
| BA982 LL4148 LS4154 BAV21 LS4150 |
SILICON, VHF BAND, MIXER DIODE
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA
0.15 A, 35 V, SILICON, SIGNAL DIODE
0.25 A, 250 V, SILICON, SIGNAL DIODE, DO-35
0.3 A, 50 V, SILICON, SIGNAL DIODE
|
TEMIC SEMICONDUCTORS
|
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| HAT1093C-EL-E HAT1095C-EL-E HAT1095C HAT1093C |
2000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOSFET Power Switching
Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| 2SD773 2SD773U4 2SD773-L2-AZ |
2000 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR
TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 2A I(C) | TO-221VAR
NPN SILICON TRANSISTOR
From old datasheet system
|
NEC Corp.
NEC[NEC]
|
| 2SJ326-AZ 2SJ326-Z |
2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
|
|
