| PART |
Description |
Maker |
| TGA2579-2-FL TGA2579-2-FL-15 |
20W Ku-Band GaN Power Amplifier
|
TriQuint Semiconductor
|
| RF3931 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1020 |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| 1EDI20N12AF 1EDI20N12AF-15 |
Single Channel MOSFET and GaN HEMT Gate Driver IC
|
Infineon Technologies A...
|
| AGN1440 |
Ku Band GaN Amplifier MMIC
|
Advanced Semiconductor ...
|
| CM420855 |
SCR/Diode POW-R-BLOKModules 55 Amperes/800 Volts
SCR/Diode POW-R-BLOK Modules 55 Amperes/800 Volts
SCR/Diode POW-R-BLOK⑩ Modules 55 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM421655 CM421255 |
SCR/Diode POW-R-BLOK?Modules 55 Amperes/1200-1600 Volts
SCR/Diode POW-R-BLOK⑩ Modules 55 Amperes/1200-1600 Volts
SCR/Diode POW-R-BLOKModules 55 Amperes/1200-1600 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| 2SK210 2SK210-BL |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
|
TOSHIBA
|
| FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET
X-Band Internally Matched FET
|
Eudyna Devices Inc
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| CM4208A2 |
SCR/Diode POW-R-BLOK Modules 25 Amperes/800 Volts
SCR/Diode POW-R-BLOK⑩ Modules 25 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
