| PART |
Description |
Maker |
| SDR9600S20 SDR9600S10 SDR9600S15 |
600 AMPS 1000 - 2000 VOLTS 25 usec STANDARD RECOVERY HIGH CURRENT RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| CM50DY-12H |
Dual IGBTMOD 50 Amperes/600 Volts 50 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM75BU-12H |
Four IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT |
45 A, 600 V, UFS N-Channel IGBT
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
45A, 600V, UFS Series N-Channel IGBT 5A00V的，的ufs系列N沟道IGBT
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| VCO-S-A17 VCO-S-1000 VCO-S-2000 VCO-S-600 VCO225PA |
VCO, 180 MHz - 220 MHz
VCO, 1000 MHz - 2000 MHz
VCO, 2000 MHz - 3000 MHz
VCO, 600 MHz - 1200 MHz
VCO, 225 MHz - 450 MHz
VCO, 1200 MHz - 2400 MHz
|
Synergy Microwave, Corp.
SYNERGY MICROWAVE CORP
|
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| CM30TF-12H |
122 x 32 pixel format, LED Backlight available 30 A, 600 V, N-CHANNEL IGBT
Six-IGBT IGBTMOD 30 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| CYW2331 CYW2331ZITR |
PLL FREQUENCY SYNTHESIZER, 2000 MHz, PDSO20
Dual Serial Input PLL with 2.0-GHz and 600-MHz Prescalers
|
Cypress Semiconductor Corp.
http://
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| UZDM4306N ZDM4306NTC |
2000 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ZETEX PLC
DIODES INC
|
| T7600130 T7601230 T7602030 T7601630 T7600430 T7600 |
Phase Control SCR (300 Amperes Avg 100-2000 Volts) 470 A, 1000 V, SCR
Phase Control SCR (300 Amperes Avg 100-2000 Volts) 470 A, 1200 V, SCR
Phase Control SCR (300 Amperes Avg 100-2000 Volts) 470 A, 600 V, SCR
Phase Control SCR (300 Amperes Average 2000 Volts)
|
Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
