| PART |
Description |
Maker |
| HPLU3103 HPLR3103 FN4501 HPLRB3103 |
52A/ 30V/ 0.019 Ohm/ N-Channel Logic Level/ Power MOSFETs
52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| STD50N03L-1 |
40 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AB
|
STMICROELECTRONICS
|
| SUM85N15-19 SUM85N15-19-E3 |
85 A, 150 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
| STL40C30H3LL |
N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 d. i. package
|
ST Microelectronics
|
| STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
| NTQD4154Z |
7.5 A, 20 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
ON SEMICONDUCTOR
|
| STL35N6F3 |
N-channel 60 V, 0.019 Ohm, 10 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 package
N-channel 60 V, 0.019 Ω, 10 A STripFET III Power MOSFET in PowerFLAT 5x6 package
|
ST Microelectronics
STMicroelectronics
|
| APT10M19BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 100V 75A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| HUFA76432S3S HUFA76432P3 HUFA76432S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 55A条（丁）|63AB
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
|
Intersil, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展|5A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五（巴西）国际消费电子展|9A一（c）|园区
|
Electronic Theatre Controls, Inc.
OKI SEMICONDUCTOR CO., LTD.
|
| ITH08F06G ITH08F06 ITH08F06B |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-252AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB
HIGH - SPEED POWERLINE N - CHANNEL IGBT
|
MITEL[Mitel Networks Corporation]
|
