| PART |
Description |
Maker |
| HYM71V8M655HCT6 |
8Mx64|3.3V|8/P/S|x4|SDR SDRAM - SO DIMM 64MB 8Mx64 | 3.3 | 8/P/S | x4 | SDRAM的特别提款权-4MB的内
|
Daesan Electronics, Corp.
|
| M464S0924DTS M464S0924DTS-C1H M464S0924DTS-C1L M46 |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 8Mx64 SDRAM内存的SODIMMM × 16位，4BanksK的刷新，3.3V的同步DRAM的社民党
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| M368L1624BT1 |
8Mx64 DDR SDRAM 184pin DIMM based on 16Mx16 Data Sheet
|
Samsung Electronic
|
| M464S0924CT1 M464S0924CT1-C1H M464S0924CT1-C1L M46 |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M464S0824DT1 M464S0824DT1-C1H M464S0824DT1-C1L M46 |
8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M464S0824ETS |
8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M366S0924DTS |
8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung Electronic
|
| IC42S16160 |
DYNAMIC RAM, SDRAM
|
ICSI
|
| IC42S16102 |
DYNAMIC RAM, SDRAM
|
ICSI
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
