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HY5DU561622CTP - 256M gDDR SDRAM

HY5DU561622CTP_3905679.PDF Datasheet

Part No.

HY5DU561622CTP

Description

256M gDDR SDRAM

File Size

243.86K / 30 Page

Maker

Hynix

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: HY5DU561622CT

Maker:

Pack:

Stock:

Unit price for :

50: $5.77

100: $5.48

1000: $5.19

Email: oulindz@gmail.com

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Related Part Number

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HY5DU561622CTP-28 HY5DU561622CTP-33 HY5DU561622CTP	256M(16Mx16) gDDR SDRAM	Hynix Semiconductor
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K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5	256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存 ; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存 8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144	SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc. SAMSUNG[Samsung semiconductor] Samsung Electronic
HY5V56BLF-I HY5V56BF-I	16Mx16\|3.3V\|8K\|H/8/P/S\|SDR SDRAM - 256M 16Mx16显示\| 3.3 \| 8K的\| H/8/P/S \|特别提款权的SDRAM - 256M	Omron Electronics, LLC
K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D2	128Mbit GDDR SDRAM	Samsung semiconductor
HY5DU121622CTP	512 Mb GDDR SDRAM	Hynix Semiconductor
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W9412G2CB	1M 】 4 BANKS 】 32 BITS GDDR SDRAM	Winbond
HY5DU121622BT-5 HY5DU121622BT-6 HY5DU121622BTP-5 H	512Mb(32Mx16) gDDR SDRAM	Hynix Semiconductor
K4D263238I-VC	128M-Bit GDDR SDRAM	Samsung Electronics
HY5DU283222F-36 HY5DU283222F-28 HY5DU283222F-26	128M(4Mx32) GDDR SDRAM	Hynix Semiconductor Inc.

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