| PART |
Description |
Maker |
| BYC29DX-600 BYC29FB-600 BYV59FX-600 BYV59FD-600 BY |
Bipolar Power Product Selection Guide
Bipolar Power Product Selection Guide
|
NXP Semiconductors
|
| BUL146FG BUL146G |
Bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
SWITCHMODE NPN Bipolar Power Transistor
|
ON Semiconductor
|
| 2SD1468S 2SD1834 2SD1834T100W 2SD1468STPR 2SD1468S |
1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
BJT
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体
|
ROHM
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| PHI920-33 PH1920-33 |
Low Power Zero-Drift Operational Amplifier with Internal Capacitors; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz
Wireless Bipolar Power Transistor/ 33W 1930 - 1990 MHz
|
Tyco Electronics
|
| FA5301 FA5301BP FA5301BPN FA5301BN |
Bipolar IC for switching power supplay control
Bipolar IC For Switching Power Supply Control
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| BCR16CS-12LB BCR16CS-12LB-T11 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150掳C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
| STE07DE220 E07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module
|
ST Microelectronics
STMicroelectronics
|
| V850E1 V850E_SV2 V850E_IA1 V850E_IA2 V850E_IA3 V85 |
V850E/IA2 Flash product ROM: 128 KB, RAM: 6 KB
V850E/IA2 Mask product ROM: 128 KB, RAM: 6 KB
V850E/IA3 Flash product ROM: 256 KB, RAM: 12 KB
ROM-less version; Internal RAM: 4K bytes
32-bit RISC single-chip microcontroller V850E/SV2
V850E/IA4 Flash memory product ROM: 256 KB, RAM: 12 KB
32-Bit Microprocessor Core
|
NEC[NEC]
|
| PHI617-30 PH1617-30 |
Wireless Bipolar Power Transistor/ 30W 1.6 - 1.7 GHz
Wireless Bipolar Power Transistor, 30W 1.6-1.7 GHz
CONNECTOR ACCESSORY 连接器附
|
Tyco Electronics
Electronic Theatre Controls, Inc.
PCA Electronics, Inc.
|
| SMDJ100A SMDJ110A SMDJ130A SMDJ120A SMDJ150 SMDJ17 |
100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
110.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
150.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
