| PART |
Description |
Maker |
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STP80N20M5 STB80N20M5 |
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh(TM) V Power MOSFET in D2PAK Package
65 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK
|
ST Microelectronics
STMICROELECTRONICS
|
| CM200DY-24H |
Dual IGBTMOD 200 Amperes/1200 Volts 200 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| IXFT74N20 IXFR90N20 IXFE24N100 |
HIPERFET POWER MOSFETs 74 A, 200 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET ISOPLUS247, 3 PIN
Single MOSFET Die 22 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| IXTH96N20P IXTT96N20P |
N-Channel Engancement Mode 96 A, 200 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-Channel Engancement Mode 96 A, 200 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
|
IXYS, Corp.
|
| OM6414SP3 |
4 A, 200 V, 0.18 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, SIP-18
|
Samwha Electronics
|
| 80N20L IXTH80N20L |
80 A, 200 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
N-Channel Enhancement Mode
|
IXYS CORP
IXYS Corporation
|
| IRF9540 IRF9540RF1S9540SM |
19A 100V 0.200 Ohm P-Channel Power MOSFETs(100.75 k) 9A 100V0.200欧姆P沟道功率MOSFET00.75十一
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
|
Electronic Theatre Controls, Inc.
Fairchild Semiconductor
|
| AP18N20GH-HF AP18N20GJ-HF AP18N20GH-HF-14 AP18N20G |
18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| DN2530N8-G DN2530N3-G |
N-Channel Depletion-Mode Vertical DMOS FETs 200 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
|
Supertex, Inc.
|
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
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