| PART |
Description |
Maker |
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| OM6059SB OM6056 OM6061SB OM6056SB OM6057SB OM6058S |
High Current, High Voltage 500V , 58 Amp N-Channel, MOSFET(大电流，高电压，500V , 58A，N沟道，MOS场效应管)
POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE
100V Single N-Channel Hi-Rel MOSFET in a PB-3A package
500V Single N-Channel Hi-Rel MOSFET in a PB-3A package
600V Single N-Channel Hi-Rel MOSFET in a PB-3A package
200V Single N-Channel Hi-Rel MOSFET in a PB-3A package
|
List of Unclassifed Manufacturers
International Rectifier
ETC[ETC]
|
| NTE2942 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| EL7202CN EL7202CS EL7202CS-T13 EL7202CS-T7 EL7202C |
High Speed, Dual Channel Power MOSFET Drivers 2 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| NTE2974 |
30V N-Channel PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
| VMO40-05P1 VMO60-05F VMO650-01F |
41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET ECOPAC-4
High dv/dt, Low-trr, HDMOS-TM Family 60 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AA
690 A, 100 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| Q62702-F1772 BF2000W |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| OM6215SS OM6214SS OM6216SS OM6217SS |
30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE
100V Dual N-Channel MOSFET in a S-6 package
400V Dual N-Channel MOSFET in a S-6 package
500V Dual N-Channel MOSFET in a S-6 package
200V Dual N-Channel MOSFET in a S-6 package
|
List of Unclassifed Manufacturers
ETC
International Rectifier
|
|
