| PART |
Description |
Maker |
| PMK27XP |
P-channel extremely low level FET 6500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BSH111 BSH111-02 |
N-channel TrenchMOS extremely low level FET N沟道TrenchMOS极低电平场效应管
N-channel enhancement mode field-effect transistor
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| GFC260 |
N Channel Power MOSFET with extremely low RDS(ON)
|
Gunter Seniconductor GmbH.
|
| PMN50XP |
P-channel TrenchMOS extremely low level FET
|
NXP Semiconductors
|
| GFC048 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| GFC150 |
N Channel Power MOSFET with extremely low RDS(ON)
|
Gunter Seniconductor GmbH.
|
| PMK30EP |
P-channel TrenchMOS extremely low level FET
|
NXP Semiconductors
|
| PMGD370XN |
Dual N-channel mTrenchMOS extremely low level FET
|
NXP Semiconductors
|
| PMZ270XN |
N-channel TrenchMOS extremely low level FET N沟道TrenchMOS极低电平场效应管
|
NXP Semiconductors
NIC Components, Corp.
|
| STY16NA90 |
N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET
|
ST Microelectronics
|
| FDD3860 FDD386008 |
N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low
|
Fairchild Semiconductor
|
