| PART |
Description |
Maker |
| CDD2395F CDD2395 |
2.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 60 - 320 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-220AB
|
Continental Device India Limited
|
| CSC1815GR CSC1815O |
0.400W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.150A Ic, 120 - 240 hFE
|
Continental Device India Limited
|
| 2DD2679 2DD2679-13 2DD2679-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
|
| 2SD1760 2SD1864 2SD1864P 2SD1760Q |
Power Transistor 50V, 3A 功率晶体0VA
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-252 晶体管|晶体管|叩| 50V五（巴西）总裁| 3A条一（c）|52
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | SIP
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| 2SB1124 2SB1124T 2SD1624T 2SB1124U |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | SOT-89 晶体管|晶体管|进步党| 50V五（巴西）总裁| 3A条一c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | SOT-89 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）|采用SOT - 89
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
PNP/NPN Epitaxial Planar Silicon Transistors
|
STMicroelectronics N.V.
Sanyo
|
| KSP27 KSP27TA KSP25 KSP25TA KSP26 KSP26TA KSP25BU |
CAP 1000PF 50V CERAMIC X7R 10% 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Darlington Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC4155 2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
ETC[ETC]
Isahaya Electronics Corporation
|
| 2SA2040 2SC5707 C5707 2SA2040TP 2SA2040TP-FA 2SC57 |
PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP / NPN Epitaxial Planar Silicon Transistors
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 8A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 8A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
|
SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
|
| BCR15PN |
Dual Built-in Resistor AF Transistors; NPN/PNP; Industrial Standars Types, Icmax of 100mA; Vceo of 50V
NPN/PNP Silicon Digital Transistor Array
|
INFINEON[Infineon Technologies AG]
|
