| PART |
Description |
Maker |
| K7S1636U4C K7S1618U4C-EC330 |
512Kx36 & 1Mx18 QDR II b4 SRAM
QDR SRAM, PBGA165 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor
Maxim Integrated Products, Inc.
|
| K7D163674B-HC30 K7D163674B-HC27 K7D163674B-HC33 K7 |
512Kx36 & 1Mx18 SRAM
|
Samsung semiconductor
http://
|
| K7B161835B K7B163635B |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung semiconductor
|
| KM736V989 KM718V089 |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung Electronic
Samsung semiconductor
|
| K7R163684B06 K7R161884B |
512Kx36 & 1Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| K7I163684B K7I161884B |
512Kx36 & 1Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| K7I323682M K7I321882M K7M161825A-QCI65 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61DDPB21M18A IS61DDPB21M18A/A1/A2 IS61DDPB251236 |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7P163666A-HC25 K7P163666A-HC33 K7P161866A-HC25 K7 |
1M X 18 STANDARD SRAM, 1.6 ns, PBGA119
512Kx36 AND 1Mx18 Synchronous Pipelined SRAM 512Kx361Mx18同步流水线的SRAM
512K X 36 STANDARD SRAM, 1.5 ns, PBGA119
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N161801A-QFCI25_20_16 K7N161845A-QFCI25_20_16 K7 |
512Kx36 & 1Mx18 Pipelined NtRAM
512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36
512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IS61QDPB251236A IS61QDPB251236A1 IS61QDPB251236A2 |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
