| PART |
Description |
Maker |
| IXFH50N20 IXFH10N65 IXFH10N60 IXFH11N100 IXFH11N60 |
HIPERFET Power MOSFTETs 42 A, 200 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HIPERFET Power MOSFTETs HIPERFET电力MOSFTETs
RES, FILM, 1.33K, 1%, .100W, 100PPM, 0805
|
IXYS, Corp.
http://
IXYS[IXYS Corporation]
|
| IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| IXFH11N80 IXFH13N80 IXFM13N80 IXFM11N80 |
HiPerFET Power MOSFETs 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFR180N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IXFN80N48 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFR100N25 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs ISOPLUS247
From old datasheet system
|
IXYS[IXYS Corporation]
|
| IXFN180N10 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFET Single MOSFET Die
|
ETC[ETC]
IXYS[IXYS Corporation]
|
| IXFKB24N90Q IXFXB24N90Q IXFK24N90Q IXFX24N90Q |
HiPerFET Power MOSFETs Q-CLASS
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
