| PART |
Description |
Maker |
| SSM6J07FU |
Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| MP4403 |
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| MP4203 |
TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching
3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
| 2SK1310A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
|
TOSHIBA
|
| RJK0351DPA10 RJK0351DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching
40 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
|
Renesas Electronics Corporation
|
| RJK1212DNS-00-J5 |
Silicon N Channel Power MOS FET Power Switching
3 A, 120 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN AND LEAD FREE, PLASTIC, HWSON-8
|
Renesas Electronics Corporation
|
| HAT1021R-EL-E HAT1021R-15 |
5.5 A, 20 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
|
