PART |
Description |
Maker |
UMC2NT106 UMC5NT1G UMC3NT2G UMC5NT2G UMC2NT1 UMC2N |
Dual Common Base−Collector Bias Resistor Transistors
|
ONSEMI[ON Semiconductor]
|
NSTB1002DXV5_06 NSTB1002DXV5T1G NSTB1002DXV5T5G NS |
Dual Common Base−Collector Bias Resistor Transistors
|
ONSEMI[ON Semiconductor]
|
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|
UMC2NT1G UMC5NT2 UMC3NT1G UMC3NT2 UMC5NT2G UMC5 UM |
Dual Bias Resistor Transistors Dual Common Base-Collector Bias Resistor Transistors
|
ONSEMI[ON Semiconductor]
|
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
EMC4DXV5T5G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
2SC3547B E000855 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR APPLICATIONS)(COMMON COLLECTOR) From old datasheet system TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON COLLECTOR)
|
Toshiba Semiconductor
|
2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
2SA1617 |
Collector-base voltage VCBO -55 V Emitter-base voltage VEBO -5 V
|
TY Semiconductor Co., Ltd
|
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor 25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz BJT 2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology Microsemi, Corp.
|
S8050 |
Collector-base breakdown voltage
|
TY Semiconductor Co., Ltd
|