PART |
Description |
Maker |
W29GL032C |
32M-BIT 3.0-VOLT PARALLEL FLASH MEMORY
|
Winbond
|
W29GL256PL9B W29GL256PL9T-TR W29GL256PH9T W29GL256 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
HI-8785 HI-8785PSI HI-8785PST HI-8783 HI-8783PDI H |
8 Bit Parallel data converted to 429 and 561 serial data out ARINC INTERFACE DEVICE 8-BIT PARALLEL DATA CONVERTED 429&561 SERIAL DATA OUT 384 MCELL 3 VOLT ZERO POWER ISP CPLD - NOT RECOMMENDED for NEW DESIGN ARINC INTERFACE DEVICE 8-BIT PARALLEL DATA CONVERTED 429&561 SERIAL DATA OUT 1 CHANNEL(S), SERIAL COMM CONTROLLER, PDSO20 ARINC INTERFACE DEVICE 8-BIT PARALLEL DATA CONVERTED 429&561 SERIAL DATA OUT 1 CHANNEL(S), SERIAL COMM CONTROLLER, PDSO24 ARINC INTERFACE DEVICE 8-BIT PARALLEL DATA CONVERTED 429&561 SERIAL DATA OUT 1 CHANNEL(S), SERIAL COMM CONTROLLER, PDIP22 512 MACROCELL 3.3 VOLT ZERO POWER ISP CP - NOT RECOMMENDED for NEW DESIGN ARINC公司接口设备位并行数据转换成429
|
HOLTIC[Holt Integrated Circuits] Holt Integrated Circuits, Inc.
|
HI-7151 HI1-7151S-2 HI1-7151T-2 HI3-7151K-5 HI3-71 |
10-Bit, High Speed, A/D Converter with Track and Hold 1-CH 10-BIT FLASH METHOD ADC, PARALLEL ACCESS, PDIP40 128 MACROCELL 3.3 VOLT ISP CPLD STORAGE, SLIDES CABINET RoHS Compliant: Yes
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位)的CMOS闪存EEPROM的(32M的8位与非的EEPROM
|
Toshiba Corporation Toshiba, Corp.
|
AT45DB041B AT45DB041B-CC AT45DB041B-CI AT45DB041B- |
4M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash
|
ATMEL[ATMEL Corporation] ETC
|
KMM372F3200BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
V826632B24S |
256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64
|
MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
V436532S04VATG |
3.3 VOLT 32M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|