| PART |
Description |
Maker |
| CM900HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM400HB-90H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
400 A, 4500 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A)
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 2SK3712 |
High voltage: VDSS = 250 V Gate voltage rating: -30 V Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| AP20GT60P-HF AP20GT60P-HF14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
High Speed Switching
|
Advanced Power Electronics Corp.
|
| AP30G120CSW-HF AP30G120CSW-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD
High Speed Switching
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| NTE3310 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|
| GT60M303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
