| PART |
Description |
Maker |
| HFR8A06F |
Glass Passivated Hyperfast Recovery Re
|
YENYO TECHNOLOGY Co., Ltd
|
| HFR8L06 |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY
|
| HFR8A12 |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| HFR8A12D |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY
|
| HFR8L06F |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| FUF2005 FUF2007 FUF2006 FUF2004 FUF2003 FUF2002 FU |
50 V, 2 A glass passivated ultrafast recovery rectifier
100 V, 2 A glass passivated ultrafast recovery rectifier
200 V, 2 A glass passivated ultrafast recovery rectifier
400 V, 2 A glass passivated ultrafast recovery rectifier
800 V, 2 A glass passivated ultrafast recovery rectifier
1000 V, 2 A glass passivated ultrafast recovery rectifier
600 V, 2 A glass passivated ultrafast recovery rectifier
RECTIFIER DIODE, DO-15
Ultrafast Recovery Rectifiers 超快恢复二极
|
Fagor
International Rectifier, Corp.
Vishay Intertechnology, Inc.
|
| GBPC25 GBPC GBPC35 GBPC12 GBPC15 GBPC2504 GBPC3504 |
12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers
Aluminum Polymer Radial Lead Capacitor; Capacitance: 680uF; Voltage: 6.3V; Case Size: 10x13 mm; Packaging: Bulk
12/ 15/ 25/ 35 Ampere Glass Passivated Bridge Rectifiers
25 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电5A，重复反相电压峰00V)) 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电35A，重复反相电压峰00V)) 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电35A，重复反相电压峰00V)) 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电35A，重复反相电压峰00V)) 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers 12555安培玻璃钝化整流
25 Ampere Glass Passivated Bridge Rectifiers(?荤????妗ユ?娴??锛?钩???娴??娴?5A锛??澶???哥???嘲??00V))
15 Ampere Glass Passivated Bridge Rectifiers(?荤????妗ユ?娴??锛?钩???娴??娴?5A锛??澶???哥???嘲??00V))
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| GBL400G GBL401G GBL406G |
4.0Amp GLASS PASSIVATED BRIGGE Rectifiers GLASS PASSIVATED
|
First Components International
First Components Intern...
|
| 1N5393GP 1N5399GP 1N5391GP 1N5392GP 1N5394GP 1N539 |
Glass Passivated Junction Rectifier(????荤?缁???存???
Glass Passivated Junction Rectifier(钝化玻璃结型整流 结玻璃钝化整流（钝化玻璃结型整流器）
GLASS PASSIVATED JUNCTION RECTIFIER 玻璃钝化整流
|
GE Security, Inc.
GE[General Semiconductor]
|
| MP1510 MP1505 MP1507 MP1503 MP154 MP158 MP151 MP15 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 15 Amperes) 单相玻璃钝化硅桥式整流器（电压范50000伏特，电流十五安培）
(MP1505 - MP1510) SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
(MP151 - MP1510) SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
|
RECTRON[Rectron Semiconductor]
|
| 1R5GU41 |
Ultra Fast Recovery Pack: DO-15
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞400V CURRENT拢潞1.5A
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?00V CURRENT?.5A
|
Gulf Semiconductor
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
