| PART |
Description |
Maker |
| HERAF808G HERAF80XG HERAF801G HERAF802G HERAF803G |
Isolation 8.0 AMPS. Glass Passivated High Efficient Rectifiers 隔离8.0安培。玻璃钝化高效整流二极管
From old datasheet system
Rectifier: High Efficient
|
Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
|
| HER1001G HER1002G HER1003G HER1004G HER1005G HER10 |
Rectifier: High Efficient
10.0 AMPS. Glass Passivated High Efficient Rectifiers
|
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Co., Ltd.
|
| MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
|
ON Semiconductor
|
| AS8650 |
High-efficient Power Management Device with High-speed CAN Interface
|
austriamicrosystems AG
|
| HFM306 HFM308 HFM301 HFM305 |
SMD, High Efficient Rectifier, 600V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 1000V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 50V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 400V, 3A, Silicon Diode
|
Rectron Semiconductor
|
| BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| HERA806G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HERA1607G HERA1601G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HER805G HER802G HER806G HER803G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HS1M HS1B |
High Efficient Rectifier
|
Yangzhou yangjie electronic co., ltd
|
