| PART |
Description |
Maker |
| RC86L60-3 RC86L60-2 RC86L60-1 |
CMOS, 3.3 Volt / 5 Volt Voice Synthesizer Chipset
|
List of Unclassifed Manufacturers
|
| IDT72V3642L10PF IDT72V3642L10PQF IDT72V3632 IDT72V |
TV 100C 100#22D SKT PLUG
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 3.3伏的CMOS SyncBiFIFO 256 × 36 × 2 512 × 36 × 2 1024 × 36 × 2
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP120
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP132
|
Integrated Device Technology, Inc.
|
| IDT72V3611 72V3611_DS_7054 IDT72V3611L20PQF IDT72V |
3.3 VOLT CMOS SyncFIFO 64 x 36
From old datasheet system
3.3 VOLT CMOS SyncFIFO?
|
IDT[Integrated Device Technology]
|
| AM29LV641GH35EI AM29LV641GL35EI AM29LV641GH55EI AM |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OControl 64兆位个M x 16位）的CMOS 3.0伏特，只有统一闪存部门与VersatileI /输出⑩控
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OControl 4M X 16 FLASH 3V PROM, 70 ns, PBGA63
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
|
Advanced Micro Devices, Inc.
|
| AM42DL640AG85IS AM42DL640AG AM42DL640AG25IT AM42DL |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
|
SPANSION
Advanced Micro Devices
|
| A29040 A29040-120 A29040-150 A29040-55 A29040-70 A |
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
512K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
128K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory
512K X 8 Bit CMOS 5.0 Volt-only Uniform Sector Flash Memory
|
AMICC[AMIC Technology]
|
| AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash
EEPROM EEPROM
|
TE Connectivity, Ltd.
|
| A29040AL-55 A29040AL-70 A29400UV-70 A2918EWH A2918 |
512K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
Dual full-bridge PWM motor driver
|
AMIC Technology
Allegro MicroSystems
|
| AM49DL322BGT85T AM49DL322BGT85S AM49DL323BGB70T AM |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous 堆叠式多芯片封装MCP）闪存和SRAM32兆位M × 8 2米x 16位）3.0伏的CMOS只，同时
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc.
Advanced Micro Devices, Inc.
|
| S29CD-J12 S29CL016J S29CL032J |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O?
|
SPANSION
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
