PART |
Description |
Maker |
X40030S14-A X40030S14-B X40031S14-A X40031S14-B X4 |
THYRISTOR/DIODE MODULE, 50A 1400VTHYRISTOR/DIODE MODULE, 50A 1400V; Voltage, Vrrm:1400V; Current, It av:50A; Case style:SEMIPACK 1; Current, It rms:95A; Current, Itsm:1500A; Voltage, Vgt:3V; Current, Igt:150mA; Centres, fixing:80mm; Triple Voltage Monitor with Intergrated CPU Supervisor
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Intersil Corporation
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ST16R820 |
Voltage Regulator IC; Output Current:300mA; Package/Case:8-MSOP; Supply Voltage Max:6V; Current Rating:300mA; Leaded Process Compatible:No; Output Current Max:300mA; Output Voltage Max:5V; Output Voltage Min:1.5V 智能卡有544字节的EEPROM非接联系MCU应用 Smartcard MCU With 544 Bytes EEPROM for Contactless/Contact Applications
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STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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FS100UM-03 |
100 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 Bench Power Supply; Output Voltage:30V; Output Current:3A; Number of Outputs:3; Calibrated:Yes; Certificate of Calibration:Yes; Output Current 2:.5A; Output Current 3:.5A; Output Voltage 2:12V; Output Voltage 3:5V HIGH-SPEED SWITCHING USE
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
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FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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Powerex Power Semiconductors Mitsubishi Electric Corporation
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SSTJ210 SSTJ211 SSTJ212 J210 J211 J212 |
N-Channel JFET UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 Voltage Regulator IC; Package/Case:5-SOT-23; Output Current:150mA; Output Voltage:2.6V; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.6V RoHS Compliant: No
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Calogic LLC Calogic LLC CALOGIC[Calogic, LLC]
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BY329X1500 BY329X-1500S BY329X-1500 BY329X-1500S12 |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Damper diode fast, high-voltage Damper diode fast/ high-voltage Damper diodes fast, high-voltage - I<sub>FRM</sub>: 16 A; I<sub>O (AV)</sub>: 10 A; V<sub>RRM</sub>: 1500 V; Package: SOD113 (TO-220F); Container: Horizontal, Rail Pack
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http:// NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system Radiation Hardened Hex Inverter JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
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INTERSIL[Intersil Corporation]
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Q62705-K151 KPY33-R |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 相对硅压阻压力传感器 Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes Silicon Piezoresistive Relative Pressure Sensor Silicon Piezoresistive Relative Press...
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Siemens Semiconductor G... SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
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HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160 QUAD 2-INPUT NOR GATE
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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SMCJ6.0C SMCJ58CA SMCJ26CA SMCJ75CA SMCJ60C SMCJ16 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS GT 7C 7#12 SKT RECP WALL Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.55W; C-E Breakdown Voltage:32V; DC Current Gain Min (hfe):60; Collector Current:1A; DC Current Gain Max (hfe):175; Power (Ptot):550mW
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