| PART |
Description |
Maker |
| MX26C1000BTC-10 MX26C1000BMC-10 MX26C1000BPC-10 MX |
Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:12A; Leaded Process Compatible:Yes
Toggle Switch; Circuitry:SPDT; Switch Operation:On-On; Contact Current Max:12A; Leaded Process Compatible:Yes 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| MX26L3220 MX26L3220XBI-12 MX26L3220XBI-90 MX26L322 |
32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
|
MCNIX[Macronix International]
|
| MX26C4000B MX26C4000BMC-10 MX26C4000BMC-12 MX26C40 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
|
MCNIX[Macronix International]
|
| MX26C1000B MX26C1000BMC-10 MX26C1000BMC-12 MX26C10 |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
|
Macronix International
|
| HN27C101AFP HN27C101AFP-12 |
N/A
131072-word x 8-bit CMOS One Time Electrically Programmable ROM
|
Hitachi Semiconductor
|
| HMC856LC5 |
28 Gbps 5-BIT DIGITAL TIME DELAY WITH PROGRAMMABLE OUTPUT VOLTAGE
|
Hittite Microwave Corpo...
|
| MX26C1000A 26C1000A |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
From old datasheet system
|
Macronix 旺宏
|
| AT90SC9636R |
AT90SC9636R Summary [Updated 06/03. 3 Pages] Summary of the AT90SC9636R giving the key features. a brief description and a block diagram.
Low-power, High performance 8-bit/16-bit secure microcontroller with 96K Byte ROM, 36K Byte EEPROM, programmable internal oscillator. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out
|
Atmel
|
| MK4096P-6 MK4096N-6 MK4096N-11 MK4096N-16 MK4096P- |
4096x1-bit dynamic RAM, 250ns acces time, 375ns cycle time, max. power 450mW.
4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW.
4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW.
|
Mostek
|
| SST27SF512-70-3C-NG SST27SF512-70-3C-WH SST27SF512 |
(SST27SFxxx) 256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 12V PROM, 70 ns, PDIP28
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 32K X 8 FLASH 12V PROM, 70 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 32K X 8 FLASH 12V PROM, 70 ns, PDIP28
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 32K X 8 FLASH 12V PROM, 90 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 12V PROM, 90 ns, PDIP28
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 12V PROM, 90 ns, PDIP28
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 64K X 8 FLASH 12V PROM, 90 ns, PDSO32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
