| PART |
Description |
Maker |
| EM621FV8AU-70LL EM7640FV8AU-70LL EM621FS16AU-45LL |
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| EM610FV8S |
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| KM68FS1000Z |
128Kx8 Bit Super Low Power and Low Voltage Full CMOS SRAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128Kx8位超级低功耗和低电压的CMOS SRAM的全部（128K的8位超低功耗和低电压的CMOS静态RAM）的
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
| IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| UPD441000LGW-D12X UPD441000LGW-D15X UPD441000LGU-B |
1M-bit(128K-word x 8-bit) Low power SRAM
|
NEC
|
| BS616LV2019AI55 BS616LV2019TI70 BS616LV2019DIP55 B |
Very Low Power CMOS SRAM 128K X 16 bit
|
Brilliance Semiconducto...
Brilliance Semiconductor
|
| LY6212816 LY6212816GV LY6212816LL LY6212816LLE LY6 |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| K6F2016R4G-XF85 K6F2016R4G K6F2016R4G-F K6F2016R4G |
2Mb(128K x 16 bit) Low Power SRAM
|
SAMSUNG[Samsung semiconductor]
|
| UT62L12816BS-70LI UT62L12816BS-70LLI UT62L12816BS- |
128K x 16 BIT LOW POWER CMOS SRAM
|
UTRON Technology
|
| STC62WV12816 |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit
|
STC
|
| K6T1008C2C K6T1008C2C-B K6T1008C2C-DB55 K6T1008C2C |
128K x8 bit Low Power CMOS Static RAM
|
Samsung semiconductor
|
